NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors

authored by
B. H. Nguyen, Xiaoying Zhuang, Timon Rabczuk
Abstract

Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C1 continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.

Organisation(s)
Institute of Continuum Mechanics
External Organisation(s)
Ton Duc Thang University
Type
Article
Journal
Computer Methods in Applied Mechanics and Engineering
Volume
346
Pages
1074-1095
No. of pages
22
ISSN
0045-7825
Publication date
01.04.2019
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Computational Mechanics, Mechanics of Materials, Mechanical Engineering, General Physics and Astronomy, Computer Science Applications
Electronic version(s)
https://doi.org/10.1016/j.cma.2018.08.026 (Access: Closed)
 

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