NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors
- verfasst von
- B. H. Nguyen, Xiaoying Zhuang, Timon Rabczuk
- Abstract
Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C1 continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.
- Organisationseinheit(en)
-
Institut für Kontinuumsmechanik
- Externe Organisation(en)
-
Ton Duc Thang University
- Typ
- Artikel
- Journal
- Computer Methods in Applied Mechanics and Engineering
- Band
- 346
- Seiten
- 1074-1095
- Anzahl der Seiten
- 22
- ISSN
- 0045-7825
- Publikationsdatum
- 01.04.2019
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Numerische Mechanik, Werkstoffmechanik, Maschinenbau, Allgemeine Physik und Astronomie, Angewandte Informatik
- Elektronische Version(en)
-
https://doi.org/10.1016/j.cma.2018.08.026 (Zugang:
Geschlossen)
